一种染色化学腐蚀率的研究，并用于检测种植体缺陷

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898125

Miao Wu, Y. Che

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引用次数: 3

摘要

在本文中，一种化学物质被用来染色种植体的轮廓。通过对三种典型器件进行截面分析，研究了其对不同涂料类型和密度的腐蚀速率。由于蚀刻速率的差异，该方法可以有效地定位Si活性区域的植入物轮廓。同时给出了实际的失效分析案例，证明了该染色剂对定位非均匀注入是有效的。

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A stain chemical etching rate study and used to detect implant defect

In this paper, a chemical is used to stain the implant profile. Its etching rate to different dope type and density is studied by performing cross-section on three typical devices and then dipping in the chemical for staining. Due to etching rate difference, the method is shown to be effective in localizing implant profile in the Si active area. Meanwhile real failure analysis cases are presented, and the stain chemical is proved effective in localizing non-uniform implantation.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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