通过多测试序列和应用感知故障模型提高内存成品率

A. Kokrady, C. Ravikumar, N. Chandrachoodan
{"title":"通过多测试序列和应用感知故障模型提高内存成品率","authors":"A. Kokrady, C. Ravikumar, N. Chandrachoodan","doi":"10.1109/VLSI.2008.115","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a way to improve the yield of memory products by selecting the appropriate test strategy for memory Built- in Self-Test (BIST). We argue that by testing the memory through a sequence of test algorithms which differ in their fault coverage, it is possible to bin the memory into multiple yield bins and increase the yield and product revenue. Further, the test strategy must take into consideration the usage model of the memory. Thus, a number of video and audio buffers are used in sequential access mode, but are overtested using conventional memory test algorithms which model a large number of defects which do not impact the operation of the buffers. We propose a binning strategy where memory test algorithms are applied in different order of strictness such that bins have a specific defect / fault grade. Depending on the applications some of these bins need not be discarded but sold at a lower price as the functionality would never catch the fault due to its usage of memory. We introduce the notion of a test map for the on-chip memories in a SoC and provide results of yield simulation on two specific test strategies called \"Most Strict First\" and \"Least Strict First\". Our simulations indicate that significant improvements in yield are possible through the adoption of the proposed technique. We show that the BIST controller area and run-time overheads also reduce when information about the usage model of the memory, such as sequential access, is exploited.","PeriodicalId":143886,"journal":{"name":"21st International Conference on VLSI Design (VLSID 2008)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2008-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Memory Yield Improvement through Multiple Test Sequences and Application-Aware Fault Models\",\"authors\":\"A. Kokrady, C. Ravikumar, N. Chandrachoodan\",\"doi\":\"10.1109/VLSI.2008.115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we propose a way to improve the yield of memory products by selecting the appropriate test strategy for memory Built- in Self-Test (BIST). We argue that by testing the memory through a sequence of test algorithms which differ in their fault coverage, it is possible to bin the memory into multiple yield bins and increase the yield and product revenue. Further, the test strategy must take into consideration the usage model of the memory. Thus, a number of video and audio buffers are used in sequential access mode, but are overtested using conventional memory test algorithms which model a large number of defects which do not impact the operation of the buffers. We propose a binning strategy where memory test algorithms are applied in different order of strictness such that bins have a specific defect / fault grade. Depending on the applications some of these bins need not be discarded but sold at a lower price as the functionality would never catch the fault due to its usage of memory. We introduce the notion of a test map for the on-chip memories in a SoC and provide results of yield simulation on two specific test strategies called \\\"Most Strict First\\\" and \\\"Least Strict First\\\". Our simulations indicate that significant improvements in yield are possible through the adoption of the proposed technique. We show that the BIST controller area and run-time overheads also reduce when information about the usage model of the memory, such as sequential access, is exploited.\",\"PeriodicalId\":143886,\"journal\":{\"name\":\"21st International Conference on VLSI Design (VLSID 2008)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-01-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"21st International Conference on VLSI Design (VLSID 2008)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSI.2008.115\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"21st International Conference on VLSI Design (VLSID 2008)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSI.2008.115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了一种通过选择合适的内存内建自检(BIST)测试策略来提高内存产品成品率的方法。我们认为,通过一系列不同故障覆盖率的测试算法来测试内存,可以将内存分为多个良率箱,从而提高良率和产品收益。此外,测试策略必须考虑到内存的使用模型。因此,在顺序访问模式下使用了许多视频和音频缓冲区,但使用传统的内存测试算法进行了过度测试,该算法模拟了大量不影响缓冲区操作的缺陷。我们提出了一种分箱策略,其中内存测试算法以不同的严格顺序应用,使得分箱具有特定的缺陷/故障等级。根据应用程序的不同,这些箱子中的一些不需要丢弃,但以较低的价格出售,因为该功能永远不会捕获由于内存使用而导致的故障。我们介绍了SoC中片上存储器测试图的概念,并提供了两种特定测试策略的良率模拟结果,称为“最严格优先”和“最不严格优先”。我们的模拟表明,通过采用所提出的技术可以显著提高产量。我们表明,当利用有关内存使用模型的信息(如顺序访问)时,BIST控制器区域和运行时开销也会减少。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Memory Yield Improvement through Multiple Test Sequences and Application-Aware Fault Models
In this paper, we propose a way to improve the yield of memory products by selecting the appropriate test strategy for memory Built- in Self-Test (BIST). We argue that by testing the memory through a sequence of test algorithms which differ in their fault coverage, it is possible to bin the memory into multiple yield bins and increase the yield and product revenue. Further, the test strategy must take into consideration the usage model of the memory. Thus, a number of video and audio buffers are used in sequential access mode, but are overtested using conventional memory test algorithms which model a large number of defects which do not impact the operation of the buffers. We propose a binning strategy where memory test algorithms are applied in different order of strictness such that bins have a specific defect / fault grade. Depending on the applications some of these bins need not be discarded but sold at a lower price as the functionality would never catch the fault due to its usage of memory. We introduce the notion of a test map for the on-chip memories in a SoC and provide results of yield simulation on two specific test strategies called "Most Strict First" and "Least Strict First". Our simulations indicate that significant improvements in yield are possible through the adoption of the proposed technique. We show that the BIST controller area and run-time overheads also reduce when information about the usage model of the memory, such as sequential access, is exploited.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信