溅射铝硅薄膜的新失效机制

22nd International Reliability Physics Symposium Pub Date : 1984-04-01 DOI:10.1109/IRPS.1984.362013

J. Curry, G. Fitzgibbon, Y. Guan, R. Muollo, G. Nelson, A. Thomas

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引用次数: 49

摘要

在对64k动态随机存取存储器(RAIM)产品进行溅射铝硅冶金可靠性测试时，发现了一种新的失效机制，导致金属位线开放。本文给出了寿命试验数据、物理失效分析和金属膜表征。观察到的现象不是严格的电迁移，而是一个温度相关的金属变形过程，如蠕变，导致晶间断裂。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New Failure Mechanisms in Sputtered Aluminum-Silicon Films

A new failure mechanism resulting in open metal bit- lines was observed during reliability testing of vendor 64k dynamic random access memory (RAIM) products using sputtered Al-Si metallurgy. Life test data, physical failure analysis, and metal film characterization are presented, The observed phenomenan is not strictly electromigratiotn, but rather a temperature-dependent metal-deformation process, such as creep, resulting in intergranular fracture.

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22nd International Reliability Physics Symposium

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