{"title":"集成二极管线性化器的1V 2.4GHz CMOS功率放大器","authors":"Kun-Yi Lin, R. Weng, C. Hsiao, H. Wei","doi":"10.1109/APCCAS.2004.1412703","DOIUrl":null,"url":null,"abstract":"A low voltage CMOS power amplifier with integrated diode linearization technique is proposed. It is designed for 2.4 GHz Bluetooth applications. The power amplifier is simulated with UMC 0.18/spl mu/m CMOS technology. Under 1V supply voltage, PA can deliver 20 dBm output power with 51% power-added-efficiency. At 2.4 GHz, the reverse isolation coefficient S12 is -27.5 dB.","PeriodicalId":426683,"journal":{"name":"The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 1V 2.4GHz CMOS power amplifier with integrated diode linearizer\",\"authors\":\"Kun-Yi Lin, R. Weng, C. Hsiao, H. Wei\",\"doi\":\"10.1109/APCCAS.2004.1412703\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low voltage CMOS power amplifier with integrated diode linearization technique is proposed. It is designed for 2.4 GHz Bluetooth applications. The power amplifier is simulated with UMC 0.18/spl mu/m CMOS technology. Under 1V supply voltage, PA can deliver 20 dBm output power with 51% power-added-efficiency. At 2.4 GHz, the reverse isolation coefficient S12 is -27.5 dB.\",\"PeriodicalId\":426683,\"journal\":{\"name\":\"The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings.\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-12-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APCCAS.2004.1412703\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 2004 IEEE Asia-Pacific Conference on Circuits and Systems, 2004. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS.2004.1412703","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1V 2.4GHz CMOS power amplifier with integrated diode linearizer
A low voltage CMOS power amplifier with integrated diode linearization technique is proposed. It is designed for 2.4 GHz Bluetooth applications. The power amplifier is simulated with UMC 0.18/spl mu/m CMOS technology. Under 1V supply voltage, PA can deliver 20 dBm output power with 51% power-added-efficiency. At 2.4 GHz, the reverse isolation coefficient S12 is -27.5 dB.