总电离剂量对130 nm 4mb SRAM存储器中子SEU截面的影响

2014 15th Latin American Test Workshop - LATW Pub Date : 2014-03-12 DOI:10.1109/LATW.2014.6841919

E. C. F. Pereira, O. Gonçalez, R. G. Vaz, C. Federico, T. H. Both, G. Wirth

{"title":"总电离剂量对130 nm 4mb SRAM存储器中子SEU截面的影响","authors":"E. C. F. Pereira, O. Gonçalez, R. G. Vaz, C. Federico, T. H. Both, G. Wirth","doi":"10.1109/LATW.2014.6841919","DOIUrl":null,"url":null,"abstract":"Fast neutron single event upset (SEU) cross section of an 130 nm 4 Mb SRAM memory was measured by exposing the memory chip to a known quasi-isotropic fast neutron fluency from a radioactive 241Am-Be neutron source. The cross section measurements were performed after exposing the memory chip to three gamma-rays accumulated doses steps and it was observed a slight growing of the neutron SEU cross section according the total ionizing dose (TID).","PeriodicalId":305922,"journal":{"name":"2014 15th Latin American Test Workshop - LATW","volume":"06 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"The effects of total ionizing dose on the neutron SEU cross section of a 130 nm 4 Mb SRAM memory\",\"authors\":\"E. C. F. Pereira, O. Gonçalez, R. G. Vaz, C. Federico, T. H. Both, G. Wirth\",\"doi\":\"10.1109/LATW.2014.6841919\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Fast neutron single event upset (SEU) cross section of an 130 nm 4 Mb SRAM memory was measured by exposing the memory chip to a known quasi-isotropic fast neutron fluency from a radioactive 241Am-Be neutron source. The cross section measurements were performed after exposing the memory chip to three gamma-rays accumulated doses steps and it was observed a slight growing of the neutron SEU cross section according the total ionizing dose (TID).\",\"PeriodicalId\":305922,\"journal\":{\"name\":\"2014 15th Latin American Test Workshop - LATW\",\"volume\":\"06 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-03-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 15th Latin American Test Workshop - LATW\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LATW.2014.6841919\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 15th Latin American Test Workshop - LATW","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LATW.2014.6841919","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

利用放射性241Am-Be中子源的准各向同性快中子流畅度，测量了130 nm 4mb SRAM存储器的快中子单事件扰动(SEU)截面。在三个伽马射线累积剂量步骤下，对存储芯片进行了截面测量，观察到根据总电离剂量(TID)，中子SEU截面略有增长。

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The effects of total ionizing dose on the neutron SEU cross section of a 130 nm 4 Mb SRAM memory

Fast neutron single event upset (SEU) cross section of an 130 nm 4 Mb SRAM memory was measured by exposing the memory chip to a known quasi-isotropic fast neutron fluency from a radioactive 241Am-Be neutron source. The cross section measurements were performed after exposing the memory chip to three gamma-rays accumulated doses steps and it was observed a slight growing of the neutron SEU cross section according the total ionizing dose (TID).

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2014 15th Latin American Test Workshop - LATW

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