一种先进的结构深亚微米MOS器件

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785851

Zhao Yibing, Laihui, Li Zhizheng, Wu Dexin

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引用次数: 0

摘要

在传统光刻设备和新型侧壁技术的基础上，提出并制备了一种结构先进的深亚微米MOS器件。有效通道长度可达0.2 /spl mu/m。优化后的n-MOSFET和p-MOSFET的跨导分别为125和80 mS/mm。n-MOSFET和p-MOSFET的突破电压分别为10伏和11伏。

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An advanced structural deep-submicron MOS device

An advanced structural deep sub-micron MOS device was presented and fabricated based on conventional photolithography equipment and novel side-wall technique. The effective channel length of 0.2 /spl mu/m could be reached. The transconductances of the optimized devices were 125 and 80 mS/mm for n-MOSFET and p-MOSFET respectively. The breakthrough voltages were 10 and 11 volt respectively for n-MOSFET and p-MOSFET.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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