多栅极SOI场效应管(mugfet)翅片厚度不对称效应

2005 IEEE International SOI Conference Proceedings Pub Date : 2005-12-27 DOI:10.1109/SOI.2005.1563571

T. Schulz, W. Xiong, C. Cleavelin, K. Schruefer, M. Gostkowski, K. Matthews, G. Gebara, R. J. Zaman, P. Patruno, A. Chaudhry, A. Woo, J. Colinge

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引用次数: 15

摘要

翅片厚度不均匀性是垂直多栅极器件(如finfet和三栅极fet)的潜在缺点。本文采用一种有意错位门的测试结构，研究了电学特性对翅片厚度变化的敏感性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fin thickness asymmetry effects in multiple-gate SOI FETs (MuGFETs)

Fin thickness non-uniformity is a potential shortcoming of vertical multiple-gate devices such as FinFETs and tri-gate FETs. In this paper a test structure with intentionally misaligned gates is used to investigate the sensitivity of electrical characteristics on fin thickness variations.

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2005 IEEE International SOI Conference Proceedings

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