在具有42个电压域的逻辑电路中,通过功能块内细粒度自适应双电源电压控制降低12%的功率

A. Muramatsu, T. Yasufuku, M. Nomura, M. Takamiya, H. Shinohara, T. Sakurai
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引用次数: 6

摘要

为了降低CMOS逻辑电路的功耗,提出了功能块内细粒度自适应双电源电压控制(FADVC)。功能模块内的工艺和设计变化都通过细粒度电源电压(VDD)控制进行补偿,以在固定时钟频率下最小化功率。在40纳米测试芯片中,数据加密核心的布局被划分为6×7电压域。每个功率域同时提供高电压点(VDDH)和低电压点(VDDL),并根据金丝雀触发器产生的设置错误警告信号自适应选择VDDH或VDDL。与传统的单VDD操作相比,该FADVC在1 mhz时钟下的功耗降低了12%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
12% Power reduction by within-functional-block fine-grained adaptive dual supply voltage control in logic circuits with 42 voltage domains
Within-functional-block fine-grained adaptive dual supply voltage control (FADVC) is proposed to reduce the power of CMOS logic circuits. Both process and design variations within a functional block are compensated by the fine-grained supply voltage (VDD) control to minimize power at fixed clock frequency. In the 40-nm test chips, the layout of a data encryption core is divided into 6×7 voltage domains. Both high VDD (VDDH) and low VDD (VDDL) are supplied to each power domain and either VDDH or VDDL is adaptively selected according to the setup error warning signals generated by canary flip-flops. Compared with the conventional single VDD operation, the proposed FADVC reduced the power by 12% at 1-MHz clock in the measurement.
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