地平面对增强动态阈值UTBB SOI nmosfet的影响

2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2014-04-02 DOI:10.1109/ICCDCS.2014.7016149

K. Sasaki, M. Manini, J. Martino, M. Aoulaiche, E. Simoen, L. Witters, C. Claeys

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引用次数: 9

摘要

本文研究了在动态阈值电压(DT)工作(VB=VG)下，地平面对超薄体和埋藏氧化物(UTBB) FDSOI器件的影响。还考虑了增强DT (eDT)中的接平面，其中后门偏置是前门偏置的倍数(VB=k×VG)和反向eDT模式(VG=k×VB)，并与其他配置进行了比较。在所有DT配置中，接平面区域的存在导致优越的直流参数，如通/关流比，更陡峭的亚阈值斜率和更高的跨导。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs

This paper investigates the ground plane influence on Ultra Thin Body and Buried Oxide (UTBB) FDSOI devices applied in a dynamic threshold voltage (DT) operation (V_B=V_G) over the conventional one (V_B=0V). The ground plane in enhanced DT (eDT), where the back gate bias is a multiple value of the front gate one (V_B=k×V_G) and the inverse eDT mode (V_G=k×V_B) were also considered and compared to the other configurations. The presence of the Ground Plane region in all DT configurations results in superior DC parameters like on-current/off-current ratio, a steeper subthreshold slope and a higher transconductance.

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2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

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