研究基于忆阻器的逻辑门的功率特性及其在安全原语中的应用

Jaya Dofe, Jonathan Frey, P. Nsengiyumva, Qiaoyan Yu
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引用次数: 2

摘要

第四种基本电路元件忆阻器由于其记忆特性而越来越受到人们的关注。在以前的工作中,忆阻器的特殊存储行为已被用于设计控制系统、存储阵列、逻辑门和安全原语。然而,对忆阻器的功率特性还没有广泛的研究。在这项工作中,我们使用了一个适合电路仿真的忆阻器模型来研究忆阻器本身和基于忆阻器的逻辑门的功率特性。仿真结果表明,与CMOS器件相比,忆阻器具有不同的功率特性。基于忆阻器的门的峰值功率不随输入电压幅值单调增加;相反,输入周期长度和电压幅值的组合决定了功率峰值的发生。原因是忆阻器的功耗取决于有效忆阻器宽度,而有效忆阻器宽度是由输入控制的。我们进一步研究了利用忆阻器实现新的分组密码SIMON的可行性。我们的研究表明,基于忆阻器的SIMON的独特功率特性可能会给从密码中提取密钥带来额外的挑战,因为它在功率采样时引入了94%的功率偏差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigating power characteristics of memristor-based logic gates and their applications in a security primitive
The fourth fundamental circuit element, memristor, attracts increasing attention because of its memory characteristic. The special memory behavior of the memristor has been exploited to design control systems, memory arrays, logic gate, and security primitives in previous work. However, the power characteristics of the memristor have not been widely studied yet. In this work, we used a memristor model that is suitable for circuit simulation to investigate the power characteristics of the memristor itself and memristor-based logic gates. Our simulation results indicate that memristor has different power characteristic compared with CMOS devices. The peak power of memristor-based gates does not monotonically increases with input voltage amplitude; instead, the combination of input period length and voltage amplitude determines the occurrence of power peak. The reason is that the power consumption of memristors depends on the effective memristor width, which is controlled by the input. We further examine the feasibility of utilizing memristors to implement a new block cipher, SIMON. Our studies show that the unique power characteristic of memristor based SIMON may add extra challenges for extraction of the secret key from the cipher as it introduces 94% power deviation while power sampling.
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