基于InP/InGaAs光控HEMT直流特性的数值模拟

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.982153

Fu Renwu, H. Ping, Chen Chao

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引用次数: 0

摘要

提出了一种新的直流特性解析公式。结果与实验数据吻合良好。在V/sub /spl psi//=1.4 V、V/sub / r/=1.0 V条件下，通道电导g/sub d/为3.09/spl倍/10/sup -2/ mS/mm，跨导g/sub m/为22.2 mS/mm，截止频率f/sub T/为16.3 GHz。探讨了光控HEMT的机理。在稳定光照条件下，与实验数据吻合较好。HEMT的光响应率高达11.4 A/W。

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Numerical simulation of DC characteristic of InP/InGaAs based optically controlled HEMT

A new analytical formula of DC characteristics is presented. It shows excellent agreement with experimental data. For the conditions of V/sub /spl psi//=1.4 V and V/sub r/=1.0 V, the channel conductance g/sub d/ is 3.09/spl times/10/sup -2/ mS/mm, the transconductance g/sub m/ is 22.2 mS/mm, and the cut-off frequency f/sub T/ is 16.3 GHz. The mechanism of optically controlled HEMT is explored. Under stable illumination, it shows good agreement with experimental data. The optical responsivity of HEMT is up to 11.4 A/W.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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