{"title":"硅压力传感器信号调理电路","authors":"M. Lee, B. Lee, Young Jun Lee","doi":"10.1109/BIPOL.1992.274039","DOIUrl":null,"url":null,"abstract":"A bipolar integrated silicon pressure sensor with signal conditioning circuitry, including a band-gap reference a differential amplifier, a voltage-to-current converter, and a current-controlled oscillator, is presented. The circuits were designed to suppress the influence of temperature and supply voltage variation. The signal conditioning circuitry can convert input pressure to a square waveform with a temperature coefficient of 67 ppm/ degrees C in the temperature range of 0 degrees C approximately 50 degrees C. This signal conditioning circuitry was fabricated by double-diffused bipolar technology and can be operated at up to 14 psi.<<ETX>>","PeriodicalId":286222,"journal":{"name":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Signal conditioning circuitry for silicon pressure sensor\",\"authors\":\"M. Lee, B. Lee, Young Jun Lee\",\"doi\":\"10.1109/BIPOL.1992.274039\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A bipolar integrated silicon pressure sensor with signal conditioning circuitry, including a band-gap reference a differential amplifier, a voltage-to-current converter, and a current-controlled oscillator, is presented. The circuits were designed to suppress the influence of temperature and supply voltage variation. The signal conditioning circuitry can convert input pressure to a square waveform with a temperature coefficient of 67 ppm/ degrees C in the temperature range of 0 degrees C approximately 50 degrees C. This signal conditioning circuitry was fabricated by double-diffused bipolar technology and can be operated at up to 14 psi.<<ETX>>\",\"PeriodicalId\":286222,\"journal\":{\"name\":\"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"101 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-10-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1992.274039\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1992.274039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Signal conditioning circuitry for silicon pressure sensor
A bipolar integrated silicon pressure sensor with signal conditioning circuitry, including a band-gap reference a differential amplifier, a voltage-to-current converter, and a current-controlled oscillator, is presented. The circuits were designed to suppress the influence of temperature and supply voltage variation. The signal conditioning circuitry can convert input pressure to a square waveform with a temperature coefficient of 67 ppm/ degrees C in the temperature range of 0 degrees C approximately 50 degrees C. This signal conditioning circuitry was fabricated by double-diffused bipolar technology and can be operated at up to 14 psi.<>
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