深亚微米CMOS栅极驱动无损传输线的建模与特性研究

27th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. Pub Date : 2004-05-13 DOI:10.1109/ISSE.2004.1490416

D. Burdia, R. Bozomitu, C. Comsa

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引用次数: 0

摘要

研究了CMOS栅极驱动电感-电容(无损)传输线的瞬态行为。考虑了输入信号过渡时间小于传输线传播延迟的两倍的情况。导出了输出电压和短路功率的封闭表达式。并给出了匹配条件下晶体管宽度的计算公式。采用了短通道器件的n次幂律MOSFET模型。最终结果与SPICE模拟结果非常吻合。

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Some aspects on modeling and characterization of deep submicrometer CMOS gates driving lossless transmission lines

The transient behavior of a CMOS gate driving an inductive-capacitive (lossless) transmission line is investigated. The case of input signal transition time smaller than twice the transmission line propagation delay is considered. Closed-form expressions for the output voltage and short-circuit power are derived. Also, a formula for calculating the transistor widths for the matched condition is obtained. The nth power law MOSFET model for short-channel devices is used. The final results are in very good agreement with SPICE simulations.

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27th International Spring Seminar on Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004.

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