V. Pauker, P. Dautriche, A. Giakoumis, A. Kazeminejad
{"title":"常关Mesfet模拟电路","authors":"V. Pauker, P. Dautriche, A. Giakoumis, A. Kazeminejad","doi":"10.1109/EUMA.1986.334263","DOIUrl":null,"url":null,"abstract":"A very small (0.04 mm2) monolithic DC to 2GHz, input/output matched, amplifier using enhancement mode GaAs MESFET's has been realized, to demonstrate the analog circuits capability of this type of transistor. The gain of the amplifier is 12dB, its noise factor is 2dB.","PeriodicalId":227595,"journal":{"name":"1986 16th European Microwave Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Normally-Off Mesfet Analogue Circuits\",\"authors\":\"V. Pauker, P. Dautriche, A. Giakoumis, A. Kazeminejad\",\"doi\":\"10.1109/EUMA.1986.334263\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A very small (0.04 mm2) monolithic DC to 2GHz, input/output matched, amplifier using enhancement mode GaAs MESFET's has been realized, to demonstrate the analog circuits capability of this type of transistor. The gain of the amplifier is 12dB, its noise factor is 2dB.\",\"PeriodicalId\":227595,\"journal\":{\"name\":\"1986 16th European Microwave Conference\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1986 16th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1986.334263\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 16th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1986.334263","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A very small (0.04 mm2) monolithic DC to 2GHz, input/output matched, amplifier using enhancement mode GaAs MESFET's has been realized, to demonstrate the analog circuits capability of this type of transistor. The gain of the amplifier is 12dB, its noise factor is 2dB.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
