一种基于参考几何的双极晶体管配置可扩展极值模型

2006 IEEE International Behavioral Modeling and Simulation Workshop Pub Date : 2006-09-01 DOI:10.1109/BMAS.2006.283469

H. Wu, S. Mijalkovic, J. Burghartz

{"title":"一种基于参考几何的双极晶体管配置可扩展极值模型","authors":"H. Wu, S. Mijalkovic, J. Burghartz","doi":"10.1109/BMAS.2006.283469","DOIUrl":null,"url":null,"abstract":"A behavioral reference based model for configuration scaling of bipolar transistor model parameters is proposed. The model is applicable to bipolar technologies with one or two collector contacts and different number of emitters. The effectiveness of the proposed scaling methodology is verified in case studies using advanced high-speed SiGe HBT technology","PeriodicalId":235383,"journal":{"name":"2006 IEEE International Behavioral Modeling and Simulation Workshop","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A Referenced Geometry Based Configuration Scalable Mextram Model for Bipolar Transistors\",\"authors\":\"H. Wu, S. Mijalkovic, J. Burghartz\",\"doi\":\"10.1109/BMAS.2006.283469\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A behavioral reference based model for configuration scaling of bipolar transistor model parameters is proposed. The model is applicable to bipolar technologies with one or two collector contacts and different number of emitters. The effectiveness of the proposed scaling methodology is verified in case studies using advanced high-speed SiGe HBT technology\",\"PeriodicalId\":235383,\"journal\":{\"name\":\"2006 IEEE International Behavioral Modeling and Simulation Workshop\",\"volume\":\"91 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Behavioral Modeling and Simulation Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BMAS.2006.283469\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Behavioral Modeling and Simulation Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BMAS.2006.283469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

提出了一种基于行为参考的双极晶体管模型参数组态缩放模型。该模型适用于具有一个或两个集电极触点和不同数量发射体的双极技术。采用先进的高速SiGe HBT技术的案例研究验证了所提出的缩放方法的有效性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A Referenced Geometry Based Configuration Scalable Mextram Model for Bipolar Transistors

A behavioral reference based model for configuration scaling of bipolar transistor model parameters is proposed. The model is applicable to bipolar technologies with one or two collector contacts and different number of emitters. The effectiveness of the proposed scaling methodology is verified in case studies using advanced high-speed SiGe HBT technology

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2006 IEEE International Behavioral Modeling and Simulation Workshop

自引率

0.00%

发文量