除了互补金属氧化物半导体

B. Courtoi, M. Forshaw
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引用次数: 15

摘要

缓慢但不可避免地接近CMOS的技术极限,导致对替代或互补器件和技术的研究稳步增加。从MRAM或谐振隧道二极管、快速单通量量子(RSFQ)系统等相对成熟的技术开始,这种研究和开发的成熟度存在广泛的差异。更具有推测性的前景包括单壁碳纳米管(SWCNT)晶体管和逻辑门,以及更具有推测性的分子晶体管器件。在更长的时间尺度上,量子计算系统的前景还在徘徊。重要的是要尝试评估任何这些器件技术取代CMOS的可能性。作者讨论了这些设备所面临的问题。此外,所有对纳米电子学的不断增加的研究都有助于澄清哪些设备可能起作用,哪些设备可能不起作用。纳米级现象的研究将有助于开发更强大的设备和系统。更基本的事实是,在纳米级和中尺度器件技术中仍有很大的机动空间:将提供示例来展示如何利用这种设计灵活性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Beyond CMOS
The slow but inevitable approach of the technological limit to CMOS has produced a steady increase in research into alternative or complementary devices and technologies. There is a wide spread in the maturity of this research and development, starting with relatively mature technologies such as MRAM or resonant tunneling diodes and rapid single flux quanta (RSFQ) systems. More speculative prospects include single-walled carbon nanotube (SWCNT) transistors and logic gates and the even more speculative molecular transistor devices. On an even longer timescale there hovers the prospect of quantum computing systems. It is important to try to assess the chances of any of these device technologies ever taking over from CMOS. The author discusses the problems these devices face. Additionally, all of the increasing research into nanoelectronics is helping to clarify which devices might or might not work. The study of nanoscale phenomena will help with the development of more robust devices and systems. More fundamental is the fact that there is still much room for manouver in nanoscale and mesoscale device technology: Examples will be presented to show how this design flexibility can be exploited.
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