{"title":"工艺特性对亚微米缺陷效应的影响","authors":"B.W. Smith, K. Hirschman","doi":"10.1109/ASMC.1990.111220","DOIUrl":null,"url":null,"abstract":"The impact of submicron mask defect printability for semiconductor processing is investigated. Computer simulations of image intensities resulting from programmed defects are compared to recorded images produced from defects of known size and proximity. Defects ranging in sizes from 0.6 to 2.0 mu m, located from 0 to 5 mu m from features imaged in various resist materials over silicon, silicon dioxide, silicon nitride, polysilicon, and aluminum show varying degrees of printability. Results analyzed through scanning electron microscopy are compared to theoretical results through two-dimensional modeling.<<ETX>>","PeriodicalId":158760,"journal":{"name":"IEEE/SEMI Conference on Advanced Semiconductor Manufacturing Workshop","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of process characteristics on submicron defect effects\",\"authors\":\"B.W. Smith, K. Hirschman\",\"doi\":\"10.1109/ASMC.1990.111220\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The impact of submicron mask defect printability for semiconductor processing is investigated. Computer simulations of image intensities resulting from programmed defects are compared to recorded images produced from defects of known size and proximity. Defects ranging in sizes from 0.6 to 2.0 mu m, located from 0 to 5 mu m from features imaged in various resist materials over silicon, silicon dioxide, silicon nitride, polysilicon, and aluminum show varying degrees of printability. Results analyzed through scanning electron microscopy are compared to theoretical results through two-dimensional modeling.<<ETX>>\",\"PeriodicalId\":158760,\"journal\":{\"name\":\"IEEE/SEMI Conference on Advanced Semiconductor Manufacturing Workshop\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/SEMI Conference on Advanced Semiconductor Manufacturing Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.1990.111220\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/SEMI Conference on Advanced Semiconductor Manufacturing Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1990.111220","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of process characteristics on submicron defect effects
The impact of submicron mask defect printability for semiconductor processing is investigated. Computer simulations of image intensities resulting from programmed defects are compared to recorded images produced from defects of known size and proximity. Defects ranging in sizes from 0.6 to 2.0 mu m, located from 0 to 5 mu m from features imaged in various resist materials over silicon, silicon dioxide, silicon nitride, polysilicon, and aluminum show varying degrees of printability. Results analyzed through scanning electron microscopy are compared to theoretical results through two-dimensional modeling.<>
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