NanoV:基于纳米线的VLSI设计

M. O. Simsir, N. Jha
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引用次数: 0

摘要

在未来十年,CMOS技术有望接近其规模限制。在提出的纳米技术中,纳米线在电路和逻辑阵列的尺寸方面具有优势,这些技术已经被制造和实验评估。对于这种技术,正在开发逻辑级设计方法。现在是时候开发使用纳米线实现超大规模集成电路设计的自动化工具了。在本文中,我们讨论了一种设计自动化工具,称为NanoV,以满足对纳米线的需求。它是一个完整的逻辑到布局的工具,具有内置的缺陷感知步骤,因为纳米技术中的缺陷水平预计相对较高(在1%到10%之间)。我们不知道有任何其他如此全面的纳米线VLSI设计工具。我们报告使用我们的工具实现的各种基准测试的面积/延迟/功耗结果。我们打算把这个工具放到网上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
NanoV: Nanowire-based VLSI design
In the coming decade, CMOS technology is expected to approach its scaling limitations. Among the proposed nanotechnologies, nanowires have the edge in the size of circuits and logic arrays that have already been fabricated and experimentally evaluated. For this technology, logic-level design methodologies are being developed. The time has now come to develop automated tools for implementing VLSI designs using nanowires. In this paper, we discuss a design automation tool, called NanoV, to fulfill this need for nanowires. It is a complete logic-to-layout tool with built-in defect-aware steps since the defect levels in nanotechnologies are expected to be relatively high (between 1 to 10%). We are unaware of any other such comprehensive VLSI design tool for nanowires. We report area/delay/power results for various benchmarks implemented using our tool. We intend to make the tool available on the web.
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