{"title":"基于90纳米CMOS技术的1.575 GHz低功耗均衡器设计","authors":"Jacek Gradzki","doi":"10.1109/DDECS.2012.6219067","DOIUrl":null,"url":null,"abstract":"In this paper low power balun design is presented. It is optimized for 1.575 GHz and designed in 90 nm UMC CMOS technology. Current consumption is only 0.44 mA under 1.2 V supply voltage. The simulation shows that gain and phase imbalance are equal to 0.08 dB and 0.045°, respectively. Single-ended power gain of this circuit is 2.2 dB. A special dimension matching has been made to minimize circuit susceptibility to variation of the manufacturing process.","PeriodicalId":131623,"journal":{"name":"2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Low power balun Design for 1.575 GHz in 90 nm CMOS rechnology\",\"authors\":\"Jacek Gradzki\",\"doi\":\"10.1109/DDECS.2012.6219067\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper low power balun design is presented. It is optimized for 1.575 GHz and designed in 90 nm UMC CMOS technology. Current consumption is only 0.44 mA under 1.2 V supply voltage. The simulation shows that gain and phase imbalance are equal to 0.08 dB and 0.045°, respectively. Single-ended power gain of this circuit is 2.2 dB. A special dimension matching has been made to minimize circuit susceptibility to variation of the manufacturing process.\",\"PeriodicalId\":131623,\"journal\":{\"name\":\"2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DDECS.2012.6219067\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DDECS.2012.6219067","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low power balun Design for 1.575 GHz in 90 nm CMOS rechnology
In this paper low power balun design is presented. It is optimized for 1.575 GHz and designed in 90 nm UMC CMOS technology. Current consumption is only 0.44 mA under 1.2 V supply voltage. The simulation shows that gain and phase imbalance are equal to 0.08 dB and 0.045°, respectively. Single-ended power gain of this circuit is 2.2 dB. A special dimension matching has been made to minimize circuit susceptibility to variation of the manufacturing process.