δ掺杂sagm雪崩光电二极管

[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI:10.1109/DRC.1991.664699

R. Kuchibhotla, J. Campbell, C. Tsai, W. Tsang

{"title":"δ掺杂sagm雪崩光电二极管","authors":"R. Kuchibhotla, J. Campbell, C. Tsai, W. Tsang","doi":"10.1109/DRC.1991.664699","DOIUrl":null,"url":null,"abstract":"Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 mu m thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 mu m thick. >","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Delta-Doped Sagm-Avalanche Photodiodes\",\"authors\":\"R. Kuchibhotla, J. Campbell, C. Tsai, W. Tsang\",\"doi\":\"10.1109/DRC.1991.664699\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 mu m thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 mu m thick. >\",\"PeriodicalId\":269691,\"journal\":{\"name\":\"[1991] 49th Annual Device Research Conference Digest\",\"volume\":\"77 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] 49th Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1991.664699\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

只提供摘要形式。报道了δ掺杂SAGM-APD的制备。乘法区的厚度仅为0.3 μ m。获得了75 GHz的增益带宽产品。使用顶面反射器，即使吸收层只有1.1 μ m厚，量子效率也超过70%。>

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Delta-Doped Sagm-Avalanche Photodiodes

Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 mu m thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 mu m thick. >

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[1991] 49th Annual Device Research Conference Digest

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