VUV光刻用单层抗蚀剂的设计理念

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference Pub Date : 1999-07-06 DOI:10.1109/IMNC.1999.797559

S. Kishimura, A. Katsuyama, M. Sasago, M. Shirai, M. Tsunooka

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引用次数: 0

摘要

我们研究了VUV光刻用单层抗蚀剂的设计。从透明度的角度来看，苯酚树脂和甲基丙烯酸酯聚合物可以用于VUV光刻。由此产生的高对比度被认为是由于碱聚合物的直接光分解和光脱保护的作用以及酸的脱保护作用。我们计划研究具有更高透明度的聚合物(如卤素取代苯酚树脂)和抑制交联的聚合物结构。

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Design concepts of single-layer-resists for VUV lithography

We have studied the design of single-layer-resists for VUV lithography. From the point of view of transparency, phenol resins may be used as well as methacrylate polymers in VUV lithography. The resulting high contrast is thought due to the effect of direct photodecomposition of base polymer and photo-deprotection in addition to the deprotection by acids. We are planning to investigate the polymers with higher transparency (ex. halogen-substituted phenol resins) and the polymer structure inhibiting the crosslinking.

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Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference

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