利用TCAD仿真分析NBTI框架的两分分量

2017 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2017-06-01 DOI:10.23919/SNW.2017.8242311

Shinkeun Kim, Youngsoo Seo, Dokyun Son, Myounggon Kang, Hyungcheol Shin

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引用次数: 0

摘要

本文将两种负偏置温度不稳定性(NBTI)框架组件分为界面陷阱生成(Δ Vit)和已有缺陷中的空穴捕获(Δ Vht)。阈值电压漂移(ΔVT)的贡献由两个分割分量验证并独立研究。利用计算机辅助设计(TCAD)软件模拟了NBTI应力作用下层间层厚度的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis of two divided component of NBTI framework using TCAD simulation

In this paper, the two Negative Bias Temperature Instability (NBTI) framework components are divided with interface trap generation (Δ Vit) and hole trapping in pre-existing defects (Δ Vht). The threshold voltage shift (ΔVT) contribution is verified by two divided components and studied independently. The impact of inter layer (IL) thickness is simulated under NBTI stress using technology computer-aided design (TCAD) software.

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2017 Silicon Nanoelectronics Workshop (SNW)

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