GaAs- algaas多量子阱调制器在GaAs和硅衬底上生长的直接实验比较

K. Goossen, G. Boyd, J. Cunningham, W. Jan, DAB. Miller, D. Chemla, R. Lum
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引用次数: 0

摘要

近年来,利用分子束外延(MBE)在GaAs衬底上生长GaAs/AlGaAs多量子阱(MQW) p -i (MQW)-n调制器s1-4和相关的自电光效应(SEED)器件5-7的技术已经趋于成熟。已经证明,这些器件可以工作在几个GHz8,并且在调制器下面加入一个mbe生长的介电镜,它们可以在反射模式下工作这些特性使得MQW调制器作为一种通过光信号进行片外通信的设备具有吸引力。由于大多数电子器件都是硅材料,因此确定在硅衬底上生长的GaAs MQW调制器的质量是很重要的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Direct Experimental Comparison of GaAs-AlGaAs Multi-Quantum Well Modulators Grown on GaAs and Silicon Substrates
Recently there has been a maturing of the technology of GaAs/AlGaAs multiple quantum well (MQW) p -i (MQW)-n modulators1-4 and related self electro-optic effect (SEED) devices 5-7 grown on GaAs substrates by molecular beam epitaxy (MBE). It has been demonstrated that these devices can operate at several GHz8, and that with the incorporation of an MBE-grown dielectric mirror beneath the modulator they may operate in reflection mode.4 These properties make MQW modulators attractive as a device for communicating off chip via optical signals. Since the majority of electronic devices are silicon, it is important to determine the quality of GaAs MQW modulators grown on Si substrates.
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