芯片内通信的光电互连比较

F. Sellaye, F. Caignet, J. Collet
{"title":"芯片内通信的光电互连比较","authors":"F. Sellaye, F. Caignet, J. Collet","doi":"10.1109/SPI.2002.258274","DOIUrl":null,"url":null,"abstract":"We simulated and compared optical and electrical interconnects for intrachip communications, focusing particularly on the dependence of the power consump tion versus the interconnect length and the transmis sion throughput. We conclude that optoelectronic interconnects today consume less energy when the interconnect length is (typically) longer than (23) mm. The competition is clearly open in the future. Optical interconnects might contribute to solve onchip power consump tion and crosstalk issues, provided that their technology becomes cheap, compatible with the CMOS processes, and that it will be possible to reduce the threshold current of the VCSEL emitters down to a few μAmps.","PeriodicalId":290013,"journal":{"name":"Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Comparison of Optical and Electrical Interconnects for Intrachip Communications\",\"authors\":\"F. Sellaye, F. Caignet, J. Collet\",\"doi\":\"10.1109/SPI.2002.258274\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We simulated and compared optical and electrical interconnects for intrachip communications, focusing particularly on the dependence of the power consump tion versus the interconnect length and the transmis sion throughput. We conclude that optoelectronic interconnects today consume less energy when the interconnect length is (typically) longer than (23) mm. The competition is clearly open in the future. Optical interconnects might contribute to solve onchip power consump tion and crosstalk issues, provided that their technology becomes cheap, compatible with the CMOS processes, and that it will be possible to reduce the threshold current of the VCSEL emitters down to a few μAmps.\",\"PeriodicalId\":290013,\"journal\":{\"name\":\"Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SPI.2002.258274\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings: 6th IEEE Workshop on Signal Propagation on Interconnects","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPI.2002.258274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

我们模拟和比较了芯片内通信的光学和电气互连,特别关注功耗与互连长度和传输吞吐量的依赖关系。我们得出的结论是,当互连长度(通常)大于(23)mm时,目前光电互连消耗的能量更少。未来的竞争显然是开放的。光互连可能有助于解决片上功耗和串扰问题,前提是他们的技术变得便宜,与CMOS工艺兼容,并且有可能将VCSEL发射器的阈值电流降低到几μ安培。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparison of Optical and Electrical Interconnects for Intrachip Communications
We simulated and compared optical and electrical interconnects for intrachip communications, focusing particularly on the dependence of the power consump tion versus the interconnect length and the transmis sion throughput. We conclude that optoelectronic interconnects today consume less energy when the interconnect length is (typically) longer than (23) mm. The competition is clearly open in the future. Optical interconnects might contribute to solve onchip power consump tion and crosstalk issues, provided that their technology becomes cheap, compatible with the CMOS processes, and that it will be possible to reduce the threshold current of the VCSEL emitters down to a few μAmps.
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