{"title":"5 Ghz铌酸锂MEMS谐振器,高FoM为153","authors":"Yansong Yang, A. Gao, Ruochen Lu, S. Gong","doi":"10.1109/MEMSYS.2017.7863565","DOIUrl":null,"url":null,"abstract":"This paper reports on the demonstration of a new class of super-high frequency (SHF) microelectromechanical system (MEMS) resonators operating in the 5 GHz range. SHF resonances have been achieved using the first order antisymmetric (A1) mode, which features a phase velocity exceeding 10000 m/s in ion-sliced and suspended Z-cut Lithium Nio-bate (LiNbO3) thin films. The fabricated device has demonstrated a high electromechanical coupling (kt2) of 29% and a high quality factor (Q) of 527 simultaneously. Consequently, this work marks the first time that MEMS resonators at SHF were demonstrated with an extremely high figure of merit (FoM= kt2Q) of 153. The SHF operation and high FoM of these A1 mode devices have showcased their potential as the key building blocks for future SHF front-end filters and multiplexers.","PeriodicalId":257460,"journal":{"name":"2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"78","resultStr":"{\"title\":\"5 Ghz lithium niobate MEMS resonators with high FoM of 153\",\"authors\":\"Yansong Yang, A. Gao, Ruochen Lu, S. Gong\",\"doi\":\"10.1109/MEMSYS.2017.7863565\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on the demonstration of a new class of super-high frequency (SHF) microelectromechanical system (MEMS) resonators operating in the 5 GHz range. SHF resonances have been achieved using the first order antisymmetric (A1) mode, which features a phase velocity exceeding 10000 m/s in ion-sliced and suspended Z-cut Lithium Nio-bate (LiNbO3) thin films. The fabricated device has demonstrated a high electromechanical coupling (kt2) of 29% and a high quality factor (Q) of 527 simultaneously. Consequently, this work marks the first time that MEMS resonators at SHF were demonstrated with an extremely high figure of merit (FoM= kt2Q) of 153. The SHF operation and high FoM of these A1 mode devices have showcased their potential as the key building blocks for future SHF front-end filters and multiplexers.\",\"PeriodicalId\":257460,\"journal\":{\"name\":\"2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-02-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"78\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MEMSYS.2017.7863565\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2017.7863565","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
5 Ghz lithium niobate MEMS resonators with high FoM of 153
This paper reports on the demonstration of a new class of super-high frequency (SHF) microelectromechanical system (MEMS) resonators operating in the 5 GHz range. SHF resonances have been achieved using the first order antisymmetric (A1) mode, which features a phase velocity exceeding 10000 m/s in ion-sliced and suspended Z-cut Lithium Nio-bate (LiNbO3) thin films. The fabricated device has demonstrated a high electromechanical coupling (kt2) of 29% and a high quality factor (Q) of 527 simultaneously. Consequently, this work marks the first time that MEMS resonators at SHF were demonstrated with an extremely high figure of merit (FoM= kt2Q) of 153. The SHF operation and high FoM of these A1 mode devices have showcased their potential as the key building blocks for future SHF front-end filters and multiplexers.