一种基于二氧化钛的挥发性阈值开关选择器，具有107非线性和低于100 pA的关断电流

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480484

Simone Cortese, Maria Trapatseli, A. Khiat, T. Prodromakis

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引用次数: 10

摘要

众所周知，ReRAM交叉条阵列在读出操作期间容易受到潜行电流问题的影响，这会破坏交叉条缩放。这个问题可以通过增加一个高度非线性的双端选择装置来解决。在这项工作中，我们提出了一种5nm厚的基于tio2的选择器，该选择器利用了挥发性阈值电阻开关，迄今为止尚未报道这种材料。该器件显示出高达100 kA/cm2的电流密度，107电流非线性和4 V电压裕度，这是二氧化钛基选择器和低于100 pA的关闭电流的最高报道。

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A TiO2-based volatile threshold switching selector device with 107 non linearity and sub 100 pA Off current

ReRAM crossbar arrays are known to be susceptible to the presence of the sneak current issue during the readout operations which undermines crossbar scaling. This problem can be solved by the addition of an highly non-linear two-terminal selector device. In this work we present a 5 nm thick TiO2-based selector which exploits a volatile threshold resistive switching, so far unreported for this material. The device shows a current density up to 100 kA/cm2, 107 current non-linearity and a 4 V voltage margin, the highest reported for TiO2-based selectors and sub 100 pA off current.

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2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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