A. Bayerl, M. Porti, J. Martín-Martínez, M. Lanza, R. Rodríguez, V. Velayudhan, E. Amat, M. Nafría, X. Aymerich, M. B. González, E. Simoen
{"title":"mosfet中通道热载流子降解:纳米尺度导电AFM研究","authors":"A. Bayerl, M. Porti, J. Martín-Martínez, M. Lanza, R. Rodríguez, V. Velayudhan, E. Amat, M. Nafría, X. Aymerich, M. B. González, E. Simoen","doi":"10.1109/IRPS.2013.6532039","DOIUrl":null,"url":null,"abstract":"In this work, the gate stack electrical properties of fresh and channel-hot-carrier (CHC) stressed MOSFETs have been investigated at the nanoscale with a Conductive Atomic Force Microscope (CAFM). For the first time, by measuring on the bare oxide, the CAFM has allowed evaluation of the degradation induced along the channel by a previous CHC stress. In particular, higher gate leakage was measured close to source and drain, which has been related to NBTI and CHC degradation, respectively.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale\",\"authors\":\"A. Bayerl, M. Porti, J. Martín-Martínez, M. Lanza, R. Rodríguez, V. Velayudhan, E. Amat, M. Nafría, X. Aymerich, M. B. González, E. Simoen\",\"doi\":\"10.1109/IRPS.2013.6532039\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the gate stack electrical properties of fresh and channel-hot-carrier (CHC) stressed MOSFETs have been investigated at the nanoscale with a Conductive Atomic Force Microscope (CAFM). For the first time, by measuring on the bare oxide, the CAFM has allowed evaluation of the degradation induced along the channel by a previous CHC stress. In particular, higher gate leakage was measured close to source and drain, which has been related to NBTI and CHC degradation, respectively.\",\"PeriodicalId\":138206,\"journal\":{\"name\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2013.6532039\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6532039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale
In this work, the gate stack electrical properties of fresh and channel-hot-carrier (CHC) stressed MOSFETs have been investigated at the nanoscale with a Conductive Atomic Force Microscope (CAFM). For the first time, by measuring on the bare oxide, the CAFM has allowed evaluation of the degradation induced along the channel by a previous CHC stress. In particular, higher gate leakage was measured close to source and drain, which has been related to NBTI and CHC degradation, respectively.
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