Bi/ sub2 /Te/ sub3 /表面氧化过程的XPS研究

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Pub Date : 1999-08-29 DOI:10.1109/ICT.1999.843404

I. Bando, K. Koizumi, K. Daikohara, Y. Oikawal, V. A. Kulbachinski, H. Ozaki

{"title":"Bi/ sub2 /Te/ sub3 /表面氧化过程的XPS研究","authors":"I. Bando, K. Koizumi, K. Daikohara, Y. Oikawal, V. A. Kulbachinski, H. Ozaki","doi":"10.1109/ICT.1999.843404","DOIUrl":null,"url":null,"abstract":"The oxidation process on the Bi/sub 2/Te/sub 3/ surface was investigated by X-ray photoelectron spectroscopy (XPS). The oxidized surface was found to have the Bi-O-Te structure with a definite thickness. The estimated oxide thicknesses from the XPS results were saturated at 1.5-2.0 nm, which was about two quintuple oxide layers thick in our oxide model. Experimental data were compared to a modified Cabrera-Mott oxidation rate model and the oxidation time dependence of the oxide thickness could be fitted very well.","PeriodicalId":253439,"journal":{"name":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"XPS study of oxidation process on Bi/sub 2/Te/sub 3/ surface\",\"authors\":\"I. Bando, K. Koizumi, K. Daikohara, Y. Oikawal, V. A. Kulbachinski, H. Ozaki\",\"doi\":\"10.1109/ICT.1999.843404\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The oxidation process on the Bi/sub 2/Te/sub 3/ surface was investigated by X-ray photoelectron spectroscopy (XPS). The oxidized surface was found to have the Bi-O-Te structure with a definite thickness. The estimated oxide thicknesses from the XPS results were saturated at 1.5-2.0 nm, which was about two quintuple oxide layers thick in our oxide model. Experimental data were compared to a modified Cabrera-Mott oxidation rate model and the oxidation time dependence of the oxide thickness could be fitted very well.\",\"PeriodicalId\":253439,\"journal\":{\"name\":\"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICT.1999.843404\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICT.1999.843404","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用x射线光电子能谱(XPS)研究了Bi/sub 2/Te/sub 3/表面的氧化过程。氧化表面具有一定厚度的Bi-O-Te结构。XPS结果估计的氧化层厚度在1.5-2.0 nm处饱和，在我们的氧化模型中，这大约是两层五层氧化层的厚度。将实验数据与改进的Cabrera-Mott氧化速率模型进行了比较，结果表明，氧化时间与氧化厚度的关系可以很好地拟合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

XPS study of oxidation process on Bi/sub 2/Te/sub 3/ surface

The oxidation process on the Bi/sub 2/Te/sub 3/ surface was investigated by X-ray photoelectron spectroscopy (XPS). The oxidized surface was found to have the Bi-O-Te structure with a definite thickness. The estimated oxide thicknesses from the XPS results were saturated at 1.5-2.0 nm, which was about two quintuple oxide layers thick in our oxide model. Experimental data were compared to a modified Cabrera-Mott oxidation rate model and the oxidation time dependence of the oxide thickness could be fitted very well.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407)

自引率

0.00%

发文量