一种新型的高共面性无铅铜柱凹凸加工工艺

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090377

Hou-Jun Hsu, Jung-Tang Huang, Kuo-Yu Lee, R. Wu, T. Tsai

{"title":"一种新型的高共面性无铅铜柱凹凸加工工艺","authors":"Hou-Jun Hsu, Jung-Tang Huang, Kuo-Yu Lee, R. Wu, T. Tsai","doi":"10.1109/IITC.2009.5090377","DOIUrl":null,"url":null,"abstract":"In this paper, we report a novel plating-friendly polishing mechanism for fabrication of high coplanarity and high density lead-free copper pillar bumps for advanced packaging applications. The final experimental results showed that the UIW (Uniformity in Wafer) could be sharply decreased from 6.37% after plating to 1.7% after polishing and even to 1.7% after reflow throughout the entire 4 inch wafer.","PeriodicalId":301012,"journal":{"name":"2009 IEEE International Interconnect Technology Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A novel high coplanarity lead free copper pillar bump fabrication process\",\"authors\":\"Hou-Jun Hsu, Jung-Tang Huang, Kuo-Yu Lee, R. Wu, T. Tsai\",\"doi\":\"10.1109/IITC.2009.5090377\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report a novel plating-friendly polishing mechanism for fabrication of high coplanarity and high density lead-free copper pillar bumps for advanced packaging applications. The final experimental results showed that the UIW (Uniformity in Wafer) could be sharply decreased from 6.37% after plating to 1.7% after polishing and even to 1.7% after reflow throughout the entire 4 inch wafer.\",\"PeriodicalId\":301012,\"journal\":{\"name\":\"2009 IEEE International Interconnect Technology Conference\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2009.5090377\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2009.5090377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在本文中，我们报告了一种新的电镀友好抛光机制，用于制造用于先进封装应用的高共面性和高密度无铅铜柱凸起。最后的实验结果表明，在整个4英寸晶圆上，uw(晶圆均匀度)可以从镀后的6.37%急剧下降到抛光后的1.7%，甚至回流后的1.7%。

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A novel high coplanarity lead free copper pillar bump fabrication process

In this paper, we report a novel plating-friendly polishing mechanism for fabrication of high coplanarity and high density lead-free copper pillar bumps for advanced packaging applications. The final experimental results showed that the UIW (Uniformity in Wafer) could be sharply decreased from 6.37% after plating to 1.7% after polishing and even to 1.7% after reflow throughout the entire 4 inch wafer.

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2009 IEEE International Interconnect Technology Conference

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