各向同性p型多晶硅横向磁阻的计算

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials Pub Date : 2007-08-20 DOI:10.1109/SIBEDM.2007.4292934

A. Moiseev

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引用次数: 0

摘要

计算了各向同性p型多晶硅的横向磁电阻与磁场的关系。考虑了空穴弛豫由晶界势垒和硅原子无序网上的散射决定的情况。

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Calculation of Transverse Magnetoresistance in Isotropic p-Type Polycrystalline Silicon

Calculation of the dependence of the transverse magnetoresistance in isotropic p-type polycrystalline silicon on a magnetic field is presented. The case is considered when holes relaxation is determined by scattering on both the grain boundaries potential barriers and the disordered net of silicon atoms.

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来源期刊

2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials

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