低能质子辐照下双栅MOSFET电荷收集的三维模拟

2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI:10.1109/INEC.2016.7589258

Shaoan Yan, Wanli Zhang, Gang Li, Yihna Chen, M. Tang, Zheng Li

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引用次数: 0

摘要

研究了低能质子辐照下20nm双栅MOSFET (DG MOSFET)的电荷收集。模拟了不同掺杂水平下的漏极电流瞬态和电荷收集。本文还讨论了不同的走向半径和位置。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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3-D simulation of charge collection in double-gate MOSFET under low-energy proton irradiation

The charge collection in 20 nm double-gate MOSFET (DG MOSFET) submitted to low-energy Proton irradiation are investigated in this paper. The drain current transient and charge collection with different doping levels are simulated. Different strike radii and locations are also discussed in the paper.

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2016 IEEE International Nanoelectronics Conference (INEC)

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