V/III比对InAs纳米线结构质量的影响

2014 Conference on Optoelectronic and Microelectronic Materials & Devices Pub Date : 1900-01-01 DOI:10.1109/COMMAD.2014.7038642

Zhi Zhang, Zhen-Yu Lu, Hong-yi Xu, Pingping Chen, W. Lu, J. Zou

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引用次数: 0

摘要

在本研究中，研究了V/III比对分子束外延生长的au催化InAs纳米线结构质量的影响。研究发现，通过调节V/III比，可以控制InAs纳米线的结构质量，在低V/III比生长条件下可以获得无缺陷的纤锌矿结构InAs纳米线。

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Effect of V/III ratio on the structural quality of InAs nanowires

In this study, the effect of V/III ratio on the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. It is found that, by tuning the V/III ratio, the structural quality of InAs nanowires can be controlled, and defect-free wurtzite structured InAs nanowires have been achieved under low V/III ratio growth.

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2014 Conference on Optoelectronic and Microelectronic Materials & Devices

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