采用表面活化键合(SAB)方法的低温互连技术

T. Suga
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引用次数: 2

摘要

SAB是一种通过离子束轰击或等离子体辐照对表面进行清洁和活化的粘合工艺。这个概念是基于固体原子清洁表面的反应性,以及在这些清洁表面和活化表面接触时形成的化学键。粘合过程包括清洗,然后在超高真空或一定的环境气氛中接触。高度活化的表面使它们能够在比传统粘合过程更低的温度下相互粘合。本文综述了SAB工艺的发展和现状。介绍了10万片铜电极(直径3 /spl mu/m,间距10 /spl mu/m)在室温下的高密度无凹凸互连及其在闪存卡组装上的应用。针对SiO/sub - 2/、玻璃和LiNbO/sub - 3/等离子材料的键合,提出了两种新的附加工艺:纳米层粘合和顺序活化工艺。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low temperature interconnect technology using surface activated bonding (SAB) method
SAB is a process for bonding surfaces which have been cleaned and activated by ion beam bombardment or plasma irradiation. The concept is based on the reactivity of atomically clean surfaces of solids and the formation of chemical bonds on contact between such clean and activated surfaces. The bonding procedure consists of cleaning followed by contact in ultra-high vacuum or in a certain ambient atmosphere. The highly activated surfaces enable them to bond to each other at a lower temperature than the conventional bonding process. This paper reviews the development and current status of the SAB process. A high-density bumpless interconnect for Cu electrodes (3 /spl mu/m in diameter, 10 /spl mu/m pitch) of 100,000 pieces at room temperature, and its application on the assembly of a flash memory card are demonstrated. Two new additional processes using a nano-layer adhesion and a sequential activation process are proposed for bonding of ionic materials such as SiO/sub 2/, glass and LiNbO/sub 3/.
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