用于3d集成的镀铜封装通孔(TEV)的可靠性

J. Heilmann, B. Wunderle, S. G. Kumar, O. Hoelck, H. Walter, O. Wittler, G. Engelmann, M. Wolf, G. Beer, K. Pressel
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引用次数: 3

摘要

通过封装通孔(tev)是一种互连技术,可以实现用环氧成型化合物封装的封装的3D堆叠和双面重新布线。这些互连是通过封装剂镀铜孔形成的,通常可以通过RDL(再分配层)路由。为了延长这些互连的功能,必须保证热机械的可靠性。必须进行专门的压力测试,以评估相关测试条件下的寿命,然后必须识别、理解失效机制,并将其定量浓缩为寿命模型,以预测未来设计的可靠性。为了确保短时间上市,加速测试(以及相应的加速系数)是工业界迫切需要的,也是可靠性作为一门学术学科的圣杯。本文提出的思想是用不同温度下的快速等温疲劳试验结果代替长时间的热循环试验,并建立两者之间的相关性。基于失效原理的物理学原理,对这一概念的适用性和可行性进行了评价和讨论。总之,本文为加快系统集成中可靠性流程的设计提供了一种一致的方法。它是基于现在可能通过薄金属层样品快速生成寿命模型,这些样品很容易用与tev相同的技术制造。需要更多的数据来确认tev的失效机制,热循环的可重复样品,并验证该方法对电子封装行业中使用的其他金属层的适用性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Reliability of Cu-plated through encapsulant vias (TEV) for 3D-integration
Through encapsulant vias (TEVs) are an interconnect technology which enables 3D stacking and double sided re-routing of packages encapsulated with epoxy molding compound. These interconnects are formed by Cu-plated holes through the encapsulant and can typically be routed by an RDL (redistribution layer). In order to enable prolonged function of these interconnects, thermomechanical reliability has to be assured. Dedicated stress tests have to be conducted to evaluate lifetime under relevant testing conditions, then failure mechanisms have to be identified, understood and quantitatively condensed into a lifetime model to predict reliability for future designs. In order to assure a short time to market, accelerated tests (and corresponding acceleration factors) are urgently needed by industry and are the holy grail of reliability as an academic discipline. The idea presented in this paper is to substitute lengthy thermal cycling tests by results obtained by rapid isothermal fatigue tests at different temperatures and establish a correlation between both of them. Based on physics of failure principles, the applicability and viability of such a concept then is evaluated and discussed.In conclusion, this work shows a consistent approach for acceleration of the design for reliability procedure in system integration. It is based on the now possible rapid generation of a lifetime model by thin metal layer samples which are easily manufacturable with the same technology as the TEVs. More data is needed to confirm the failure mechanisms in TEVs, reproducible samples for thermal cycling and to validate the applicability of the method also to other metal layers used in the electronic packaging industry.
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