一种具有低相位噪声性能的新型紧凑互补Colpitts差分CMOS压控振荡器

Chien-Cheng Wei, H. Chiu, Yi-Tzu Yang
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引用次数: 11

摘要

本文提出了一种低相位噪声的ka波段CMOS压控振荡器。该CMOS压控振荡器核心采用了0.18 μ m CMOS技术的新型互补Colpitts结构,实现了低相位噪声性能的差分端输出,并且工作频率更高。VCO振荡范围为29.8至30 GHz,调谐范围为200 MHz。测量到的1 mhz偏置相位噪声在30 GHz时为-109 dBc/Hz,在29.8 GHz时为105.5 dBc/Hz。VCO核心的功耗仅为27mw。据作者所知,所提出的CMOS压控振荡器在29.95 GHz频段达到了-185 dB的最佳优值(FOM)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel compact complementary Colpitts differential CMOS VCO with low phase-noise performance
A low phase-noise Ka-band CMOS voltage-controlled oscillator is proposed in this paper. The CMOS VCO core adopts a new complementary Colpitts structure in a 0.18- mum CMOS technology to achieve the differential-ended outputs with low phase-noise performance, as well as operate at much higher frequency. The VCO oscillates from 29.8 to 30 GHz with 200 MHz tuning range. The measured phase-noise at 1-MHz offset is -109 dBc/Hz at 30 GHz and 105.5 dBc/Hz at 29.8 GHz. The power consumption of the VCO core is only 27 mW. To the authorspsila knowledge, the proposed CMOS VCO achieves the best figure of merit (FOM) of -185 dB at 29.95- GHz band.
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