{"title":"1024位全解码MNOS非易失性存储器","authors":"D. Bostock","doi":"10.1109/esscirc.1976.5469232","DOIUrl":null,"url":null,"abstract":"A 1024-bit fully decoded MNOS memory is described which is fabricated using silicon-on-sapphire technology to provide the required isolation between the MNOS memory array and the decoding circuitry.","PeriodicalId":378614,"journal":{"name":"ESSCIRC 76: 2nd European Solid State Circuits Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1976-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1024-Bit Fully Decoded MNOS Non-Volatile Memory\",\"authors\":\"D. Bostock\",\"doi\":\"10.1109/esscirc.1976.5469232\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1024-bit fully decoded MNOS memory is described which is fabricated using silicon-on-sapphire technology to provide the required isolation between the MNOS memory array and the decoding circuitry.\",\"PeriodicalId\":378614,\"journal\":{\"name\":\"ESSCIRC 76: 2nd European Solid State Circuits Conference\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1976-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 76: 2nd European Solid State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/esscirc.1976.5469232\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 76: 2nd European Solid State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/esscirc.1976.5469232","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1024-bit fully decoded MNOS memory is described which is fabricated using silicon-on-sapphire technology to provide the required isolation between the MNOS memory array and the decoding circuitry.
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