高密度dram中邻域模式敏感故障检测的并行可测试设计

Ju Yeob Kim, S. Hong, Jong Kim
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引用次数: 3

摘要

随着存储器密度的增加,用于DRAM的测试模式的数量至少呈线性增加。它会影响内存测试总成本的增加。我们只考虑邻近模式敏感故障,这是高密度DRAM中主要和复杂的故障。因此,对于1g DRAM,如果测试模式一个接一个地应用于存储单元,测试时间可能是几个小时。为了加快高密度dram的测试速度,我们提出了一种并行可访问解码器,它允许一次进行多个读/写操作。使用这种方案,我们可以减少大约500倍的测试时间。这种新的解码器每条比特线只需要8个额外的晶体管。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Parallely testable design for detection of neighborhood pattern sensitive faults in high density DRAMs
The number of test patterns for DRAM increases at least linearly as the memory density increases. It affects the increase in the total cost of memory test. We consider only neighborhood pattern sensitive faults, which are the major and complicated faults in a high density DRAM. Thus, for a 1 G DRAM, the testing time may be several hours if test patterns are applied to memory cells one by one. In order to speed up the testing of high density DRAMs, we propose a parallel accessible decoder, which allows multiple read/write operations at a time. With this scheme, we can reduce the testing time roughly 500 times. This new decoder requires only 8 extra transistors per bit line.
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