微观结构对电迁移诱导空洞的影响

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232556

H. Ceric, R. Orio, J. Červenka, Siegfried Selberherr

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引用次数: 1

摘要

我们提出了一种最先进的电迁移模型在典型铜微观结构的双大马士革互连上的应用。通过模拟研究了微观结构对电迁移诱导空洞形成和发展的影响，并与实验结果进行了比较。仔细研究表明，晶界网络对空穴成核点的形成和空穴的发育有决定性的影响。

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The effect of microstructure on electromigration induced voids

We present the application of a state of the art electromigration model on a dual damascene interconnect with typical copper microstructure. The influence of the microstructure on the formation and development of an electromigration induced void is studied by simulation and the results are compared with experiments. A close investigation has shown that the network of grain boundaries has a decisive impact on the formation of void nucleation sites and void development.

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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