高温碳化硅肖特基二极管的两种参数提取方案——向现实收敛

2013 IEEE 19th International Symposium for Design and Technology in Electronic Packaging (SIITME) Pub Date : 2013-10-01 DOI:10.1109/SIITME.2013.6743669

G. Pristavu, G. Brezeanu, F. Draghici

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引用次数: 1

摘要

本文提出了SiC肖特基二极管的两种参数提取方法。这些方法被实现并测试了真实器件(SiC肖特基二极管)的特性。特别关注这两种方法如何收敛到相同的解决方案，以及提取的结果如何提供有关潜在设备技术改进的有价值的信息。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Two parameter extraction solutions for high temperature SiC Schottky diodes — Converging to reality

This paper presents two methods of parameter extraction for SiC Schottky diodes. These methods are implemented and tested for characteristics of real devices (SiC Schottky diodes). Extra attention is paid to how these two methods can converge to the same solution and how the extracted results can offer valuable information about potential device technology improvement.

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来源期刊

2013 IEEE 19th International Symposium for Design and Technology in Electronic Packaging (SIITME)

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