{"title":"射频频段对45nm RFSOI fet功率放大器直流和大信号可靠性的影响","authors":"Aarti Rathi, P. Srinivasan, A. Dixit","doi":"10.1109/EDTM55494.2023.10102985","DOIUrl":null,"url":null,"abstract":"In this work we highlight the impact of RF frequency on the DC and large signal reliability performance of a single nFET based power-amplifier (PA) cell for three different frequency bands, e.g., Ku, K, and Ka. We observe that the overall performance of the PA cell is superior in the Ka-band but the performance degradation due to reliability mechanisms is also more in this band. The impact of large-signal stress is high when PA is stressed in compression or near the P1dB region. This holds true for all frequency bands investigated in this work.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Impact of RF Frequency Bands on the DC and Large Signal Reliability of a 45nm RFSOI NFET based Power Amplifier Cell\",\"authors\":\"Aarti Rathi, P. Srinivasan, A. Dixit\",\"doi\":\"10.1109/EDTM55494.2023.10102985\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we highlight the impact of RF frequency on the DC and large signal reliability performance of a single nFET based power-amplifier (PA) cell for three different frequency bands, e.g., Ku, K, and Ka. We observe that the overall performance of the PA cell is superior in the Ka-band but the performance degradation due to reliability mechanisms is also more in this band. The impact of large-signal stress is high when PA is stressed in compression or near the P1dB region. This holds true for all frequency bands investigated in this work.\",\"PeriodicalId\":418413,\"journal\":{\"name\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM55494.2023.10102985\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10102985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of RF Frequency Bands on the DC and Large Signal Reliability of a 45nm RFSOI NFET based Power Amplifier Cell
In this work we highlight the impact of RF frequency on the DC and large signal reliability performance of a single nFET based power-amplifier (PA) cell for three different frequency bands, e.g., Ku, K, and Ka. We observe that the overall performance of the PA cell is superior in the Ka-band but the performance degradation due to reliability mechanisms is also more in this band. The impact of large-signal stress is high when PA is stressed in compression or near the P1dB region. This holds true for all frequency bands investigated in this work.
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