{"title":"利用各种实验技术研究PECVD沉积的a-Si:H薄膜的光学性质","authors":"Yudong Zhang, Xingyu Li, Jiale Tang, Yongjie Hu, Jie Yuan, Lulu Guan, H. Cui, Guanghui Ding, Xinying Shi, Kaidong Xu, Shiwei Zhuang","doi":"10.1109/CSTIC52283.2021.9461495","DOIUrl":null,"url":null,"abstract":"In order to study the optical properties of hydrogenated amorphous silicon (a-Si:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD), the influence of process parameters on the extinction coefficient (EC) and the refractive index(n) of a-Si:H films is investigated in the spectrum from 400 to 900 cm−1. The results show that the enhanced HF power and substrate temperature are the most important parameters for increasing the EC and n of the film.","PeriodicalId":186529,"journal":{"name":"2021 China Semiconductor Technology International Conference (CSTIC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of the optical properties of a-Si:H films deposited by PECVD using various experimental techniques\",\"authors\":\"Yudong Zhang, Xingyu Li, Jiale Tang, Yongjie Hu, Jie Yuan, Lulu Guan, H. Cui, Guanghui Ding, Xinying Shi, Kaidong Xu, Shiwei Zhuang\",\"doi\":\"10.1109/CSTIC52283.2021.9461495\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to study the optical properties of hydrogenated amorphous silicon (a-Si:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD), the influence of process parameters on the extinction coefficient (EC) and the refractive index(n) of a-Si:H films is investigated in the spectrum from 400 to 900 cm−1. The results show that the enhanced HF power and substrate temperature are the most important parameters for increasing the EC and n of the film.\",\"PeriodicalId\":186529,\"journal\":{\"name\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC52283.2021.9461495\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC52283.2021.9461495","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation of the optical properties of a-Si:H films deposited by PECVD using various experimental techniques
In order to study the optical properties of hydrogenated amorphous silicon (a-Si:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD), the influence of process parameters on the extinction coefficient (EC) and the refractive index(n) of a-Si:H films is investigated in the spectrum from 400 to 900 cm−1. The results show that the enhanced HF power and substrate temperature are the most important parameters for increasing the EC and n of the film.
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