Performance Analysis of Silicon and III-V Channel Material for Junctionless-Gate-All-Around Field Effect Transistor

The scaling down of device dimension beyond the Moore’s Law era have introduce the use of new material and device architecture. This paper reports a comparative study between Silicon and III-V junctionless-gate-all-around (JGAA) transistor as an alternative approach to overcome the short channel effects (SCEs). The device is simulated and characterized using TCAD Sentaurus. The III-V semiconductor channel material applied are Gallium Nitrite (GaN) and Gallium Arsenide (GaAs). The device electrical performance was compared in terms of the threshold voltage (Vth), subthreshold slope (SS), drain current (Ion) and leakage current (Ioff) extracted from the current-voltage characteristics. The results demonstrated a feasibility of using advanced device architecture using non-silicon material for future nanoelectronics application.