频率相关电荷泵浦-缺陷深度分析工具?

2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI:10.1109/IIRW.2012.6468942

J. Ryan, R. Southwick, J. Campbell, K. Cheung, J. Suehle

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引用次数: 3

摘要

我们研究了使用频率相关电荷泵浦(FD-CP)来确定整体缺陷深度分布的有效性。通过简单的物理论证，我们得出以下结论:(1)体缺陷的有效隧穿长度可能与实际物理深度有很大不同;(2)只有一小部分脱陷电荷可能导致CP电流(ICP)，从而导致分析误差。因此，频率和缺陷深度之间的关系比以前报道的要复杂得多。

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Frequency dependent charge pumping — A defect depth profiling tool?

We investigate the validity of using frequency-dependent charge pumping (FD-CP) to determine bulk defect depth distributions. Using simple physical arguments we conclude that: (1) the effective tunneling length to a bulk defect can be very different than its actual physical depth, and (2) only a fraction of detrapping charge may contribute to the CP current (ICP) resulting in analysis errors. Thus, the relationship between frequency and defect depth is much more complex than what has been previously reported.

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2012 IEEE International Integrated Reliability Workshop Final Report

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