C-V和DLTS作为硅太阳能电池的表征工具

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003371

Z. Chobola, A. Ibrahim, Z. Růžička

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引用次数: 0

摘要

对面积为100 cm/sup /的单晶硅太阳能电池进行了低频电容电压(C-V)和深能级瞬态光谱(DLTS)测量。深能级瞬态光谱(deep level transient spectroscopy, DLTS)技术是一种利用热发射和深能级载流子发射探测p-n结或肖特基势垒空间电荷区(SCR)中大多数载流子陷阱的良好技术。空间电荷区基本上耗尽了移动载流子，因此非常像体绝缘体。

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C-V and DLTS as characterization tools for silicon solar cells

Low frequency capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements were performed on monocrystalline silicon solar cells with a 100 cm/sup 2/ area. The deep level transient spectroscopy (DLTS) technique is a good technique for detecting the majority carrier traps by thermal emission and emission of carriers at deep energy levels which are located in the space charge region (SCR) of a p-n junction or Schottky barrier. The space charge region is essentially depleted of mobile carriers and hence is very much like the bulk insulators.

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来源期刊

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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