实现批量生产的嵌入式MRAM可靠性磁抗扰度准则

T. Lee, K. Yamane, L. Y. Hau, R. Chao, N. L. Chung, V. B. Naik, K. Sivabalan, J. Kwon, Jia Hao Lim, W. Neo, K. Khua, N. Thiyagarajah, S. H. Jang, B. Behin-Aein, E. Toh, Y. Otani, D. Zeng, N. Balasankaran, L. C. Goh, Timothy Ling, J. Hwang, Lei Zhang, Rachel Low, Soon Leng Tan, C. Seet, J. W. Ting, Stanley Ong, Y. You, S. Woo, E. Quek, S. Siah
{"title":"实现批量生产的嵌入式MRAM可靠性磁抗扰度准则","authors":"T. Lee, K. Yamane, L. Y. Hau, R. Chao, N. L. Chung, V. B. Naik, K. Sivabalan, J. Kwon, Jia Hao Lim, W. Neo, K. Khua, N. Thiyagarajah, S. H. Jang, B. Behin-Aein, E. Toh, Y. Otani, D. Zeng, N. Balasankaran, L. C. Goh, Timothy Ling, J. Hwang, Lei Zhang, Rachel Low, Soon Leng Tan, C. Seet, J. W. Ting, Stanley Ong, Y. You, S. Woo, E. Quek, S. Siah","doi":"10.1109/IRPS45951.2020.9128317","DOIUrl":null,"url":null,"abstract":"In the era of embedded MRAM (eMRAM) technology evolution for the replacement of eFlash and SRAM, the correlation between magnetic immunity (MI) and eMRAM reliability must be well understood to realize the mass production. In this paper, we have classified the types of MIs and also established the MI guidelines for eMRAM product reliability for the first time. From 40Mb eMRAM package-level data, our proposed MI specifications guarantee the 10 years of reliability at operating temperatures ranging from -40°C to 150°C, which covers all industrial-grade and automotive-grade-1 applications.","PeriodicalId":116002,"journal":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","volume":"17 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Magnetic Immunity Guideline for Embedded MRAM Reliability to Realize Mass Production\",\"authors\":\"T. Lee, K. Yamane, L. Y. Hau, R. Chao, N. L. Chung, V. B. Naik, K. Sivabalan, J. Kwon, Jia Hao Lim, W. Neo, K. Khua, N. Thiyagarajah, S. H. Jang, B. Behin-Aein, E. Toh, Y. Otani, D. Zeng, N. Balasankaran, L. C. Goh, Timothy Ling, J. Hwang, Lei Zhang, Rachel Low, Soon Leng Tan, C. Seet, J. W. Ting, Stanley Ong, Y. You, S. Woo, E. Quek, S. Siah\",\"doi\":\"10.1109/IRPS45951.2020.9128317\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the era of embedded MRAM (eMRAM) technology evolution for the replacement of eFlash and SRAM, the correlation between magnetic immunity (MI) and eMRAM reliability must be well understood to realize the mass production. In this paper, we have classified the types of MIs and also established the MI guidelines for eMRAM product reliability for the first time. From 40Mb eMRAM package-level data, our proposed MI specifications guarantee the 10 years of reliability at operating temperatures ranging from -40°C to 150°C, which covers all industrial-grade and automotive-grade-1 applications.\",\"PeriodicalId\":116002,\"journal\":{\"name\":\"2020 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"17 5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS45951.2020.9128317\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS45951.2020.9128317","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

在取代eFlash和SRAM的嵌入式MRAM (eMRAM)技术发展的时代,为了实现批量生产,必须充分了解磁抗扰度(MI)与eMRAM可靠性之间的相关性。本文对eMRAM产品可靠性的MI类型进行了分类,并首次建立了eMRAM产品可靠性的MI指南。从40Mb eMRAM封装级数据,我们提出的MI规格保证了在-40°C至150°C的工作温度下10年的可靠性,涵盖了所有工业级和汽车一级应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Magnetic Immunity Guideline for Embedded MRAM Reliability to Realize Mass Production
In the era of embedded MRAM (eMRAM) technology evolution for the replacement of eFlash and SRAM, the correlation between magnetic immunity (MI) and eMRAM reliability must be well understood to realize the mass production. In this paper, we have classified the types of MIs and also established the MI guidelines for eMRAM product reliability for the first time. From 40Mb eMRAM package-level data, our proposed MI specifications guarantee the 10 years of reliability at operating temperatures ranging from -40°C to 150°C, which covers all industrial-grade and automotive-grade-1 applications.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信