一个x波段SiGe驱动放大器

2013 8th International Conference on Electrical and Electronics Engineering (ELECO) Pub Date : 2013-11-01 DOI:10.1109/ELECO.2013.6713857

Hasip Terlemez, O. Palamutçuogullari

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引用次数: 0

摘要

本文介绍了一种工作在x波段(7- 10ghz)的集成驱动放大器。该驱动放大器采用0.25 μm SiGe BiCMOS工艺实现。两级推挽放大器使用片上变压器进行单端到差分信号转换以及输入和输出阻抗匹配。在3.3 V电源电压下工作，该放大器在1db压缩点的实测输出功率为13dbm，功率附加效率为12%，小信号增益为21db。

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An X-Band SiGe driver amplifier

In this paper, an integrated driver amplifier operating at X-Band (7-10 GHz) frequencies is presented. This driver amplifier is implemented in a 0.25-μm SiGe BiCMOS process. The two-stage push-pull amplifier uses on-chip transformers for the purpose of single-ended to differential signal conversion as well as input and output impedance matching. Operating with a 3.3 V supply voltage, the amplifier exhibits a measured output power of 13 dBm at 1-dB compression point with power-added efficiency of 12% and small signal gain of 21 dB.

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2013 8th International Conference on Electrical and Electronics Engineering (ELECO)

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