Zhigong Wang, M. Berroth, V. Hurm, M. Lang, U. Notwotny, P. Hofmann, A. Hulsmann, K. Kohler, B. Raynor, J. Schneider
{"title":"17ghz带宽17db增益0.3 /spl mu/m-HEMT低功率限制放大器","authors":"Zhigong Wang, M. Berroth, V. Hurm, M. Lang, U. Notwotny, P. Hofmann, A. Hulsmann, K. Kohler, B. Raynor, J. Schneider","doi":"10.1109/VLSIC.1995.520703","DOIUrl":null,"url":null,"abstract":"The design of a limiting amplifier with a high speed, a high gain, and a wide dynamic range is a basic task for the realization of high-speed data transmission systems. A limiting amplifier fabricated using Si-bipolar technology can be operated at 15 Gb/s with a power consumption of 720 mW. An AlGaAs/GaAs HBT limiting amplifier can be operated up to 15 GHz with a power consumption of 1.5 W. The HEMT limiting amplifier presented in this paper shows a higher bandwidth but needs a much lower DC power.","PeriodicalId":256846,"journal":{"name":"Digest of Technical Papers., Symposium on VLSI Circuits.","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"17 GHz-bandwidth 17 dB-gain 0.3 /spl mu/m-HEMT low-power limiting amplifier\",\"authors\":\"Zhigong Wang, M. Berroth, V. Hurm, M. Lang, U. Notwotny, P. Hofmann, A. Hulsmann, K. Kohler, B. Raynor, J. Schneider\",\"doi\":\"10.1109/VLSIC.1995.520703\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design of a limiting amplifier with a high speed, a high gain, and a wide dynamic range is a basic task for the realization of high-speed data transmission systems. A limiting amplifier fabricated using Si-bipolar technology can be operated at 15 Gb/s with a power consumption of 720 mW. An AlGaAs/GaAs HBT limiting amplifier can be operated up to 15 GHz with a power consumption of 1.5 W. The HEMT limiting amplifier presented in this paper shows a higher bandwidth but needs a much lower DC power.\",\"PeriodicalId\":256846,\"journal\":{\"name\":\"Digest of Technical Papers., Symposium on VLSI Circuits.\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers., Symposium on VLSI Circuits.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1995.520703\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers., Symposium on VLSI Circuits.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1995.520703","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The design of a limiting amplifier with a high speed, a high gain, and a wide dynamic range is a basic task for the realization of high-speed data transmission systems. A limiting amplifier fabricated using Si-bipolar technology can be operated at 15 Gb/s with a power consumption of 720 mW. An AlGaAs/GaAs HBT limiting amplifier can be operated up to 15 GHz with a power consumption of 1.5 W. The HEMT limiting amplifier presented in this paper shows a higher bandwidth but needs a much lower DC power.