栅极驱动对3.3 kV SiC mosfet三相逆变器性能的影响

2020 Progress in Applied Electrical Engineering (PAEE) Pub Date : 2020-06-01 DOI:10.1109/paee50669.2020.9158727

Radosław Sobieski, Przemysław Trochimiuk, Hubert Skoneczny, J. Rąbkowski

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引用次数: 1

摘要

本文讨论了一种新的开环栅极驱动器对3.3 kV/450 a SiC MOSFET模块在三相逆变器中的影响。总的来说，这个驱动器提高了开关速度，减少了在导通过程中耗散的能量损失。根据给出的双脉冲测试结果，开关时间更短，导通能量降低了1 / 2。最后，对250kva三相逆变器的功率损耗进行了研究，以显示新的栅极驱动器的影响:使用所提出的解决方案，开关频率增加了50%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impact of a gate drive on performance of three-phase inverters based on 3.3 kV SiC MOSFETs

This paper discusses the impact of a new open-loop gate driver for a 3.3 kV/450 A SiC MOSFET module operating in a three-phase inverter. In general, this driver improves switching speed and reduces energy loss dissipated during the turn-on process. According to presented double-pulse test results switching times are shorter and turn-on energy is up to two times lower. Finally, a study on power losses in a 250 kVA three-phase inverter was carried out to show the impact of the new gate driver: an increase of the switching frequency by 50% is enabled with the proposed solution.

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2020 Progress in Applied Electrical Engineering (PAEE)

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