{"title":"微波晶体管功率整流器及其应用","authors":"Z. Popovic, I. Ramos, T. Reveyrand, M. Litchfield","doi":"10.1109/CSICS.2016.7751055","DOIUrl":null,"url":null,"abstract":"This paper presents design, analysis and experimental results on synchronous and self- synchronous microwave transistor rectifiers implemented with GaN HEMTs at frequencies from 2 to 10GHz. The rectifier/power amplifier duality is explained and measurements confirming this mode of operation are presented. Finally, rectifier applications in wireless power transfer and high- frequency integrated dc-dc converters are discussed, including a GaN MMIC dc-dc converter switching at 4.6GHz.","PeriodicalId":183218,"journal":{"name":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"865 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Microwave Transistor Power Rectifiers and Applications\",\"authors\":\"Z. Popovic, I. Ramos, T. Reveyrand, M. Litchfield\",\"doi\":\"10.1109/CSICS.2016.7751055\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents design, analysis and experimental results on synchronous and self- synchronous microwave transistor rectifiers implemented with GaN HEMTs at frequencies from 2 to 10GHz. The rectifier/power amplifier duality is explained and measurements confirming this mode of operation are presented. Finally, rectifier applications in wireless power transfer and high- frequency integrated dc-dc converters are discussed, including a GaN MMIC dc-dc converter switching at 4.6GHz.\",\"PeriodicalId\":183218,\"journal\":{\"name\":\"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"865 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2016.7751055\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2016.7751055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Microwave Transistor Power Rectifiers and Applications
This paper presents design, analysis and experimental results on synchronous and self- synchronous microwave transistor rectifiers implemented with GaN HEMTs at frequencies from 2 to 10GHz. The rectifier/power amplifier duality is explained and measurements confirming this mode of operation are presented. Finally, rectifier applications in wireless power transfer and high- frequency integrated dc-dc converters are discussed, including a GaN MMIC dc-dc converter switching at 4.6GHz.