具有多天存储时间的新型量子点存储器:迈向圣杯的最后一步?

2019 19th Non-Volatile Memory Technology Symposium (NVMTS) Pub Date : 2019-10-01 DOI:10.1109/NVMTS47818.2019.8986178

D. Bimberg, T. Mikolajick, X. Wallart

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引用次数: 3

摘要

QD-Flash概念的可行性，其快速写入和擦除时间，以及在室温下4天的存储时间。嵌入在(AlGa)P矩阵中的(InGa)Sb量子点的孔的存储时间可以通过生长修饰延长到10 y。隧道结构最近被证明可以解决存储时间和擦除时间之间的权衡冲突。QD-NVSRAM建议成为第一个商业应用。

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Novel Quantum Dot Based Memories with Many Days of Storage Time : Last Steps towards the Holy Grail?

The feasibility of the QD-Flash concept, its fast write and erase times, is demonstrated together with storage times of 4 days at room temperature. The storage time of holes in (InGa)Sb QDs embedded in a (AlGa)P matrix can be extended by growth modifications to 10 y. Tunneling structures were recently demonstrated to solve the trade-off conflict between storage time and erase time. A QD-NVSRAM is suggested to become the first commercial application.

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2019 19th Non-Volatile Memory Technology Symposium (NVMTS)

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